Thanks for visiting my webpage! I am currently a postdoctoral research associate in the Research Laboratory of Electronics (RLE) at MIT working on an interesting project on energy harvesting with Professor Anantha Chandrakasan and Professor Jeffrey Lang. It involves the design of a MEMS based harvester and low power circuit design for machine health monitoring IoT application.
I received my Ph.D degree from Microsystems Technology Laboratory (MTL) at MIT in 2016 under the supervision of Professor Dimitri Antoniadis and Professor Tomas Palacios. The dissertation involved developing physics-based compact model for Gallium Nitride (GaN) high electron mobility transistors (HEMTs) for RF and HV applications. My academic genealogy can be found here.
My undergraduate education (B.Tech + M.Tech) was completed at the Indian Institute of Technology, Madras (IITM) in the area of Microelectronics and VLSI. I have worked in the past as a researcher at the Fraunhofer-IISB Germany, Fairchild India PVT LTD, Texas Instruments and Analog Devices Inc.
My research interests are in the areas of solid state physics, device modeling, III-V semiconductor technology, novel beyond-Si RF and HV device-circuit interaction, energy harvesting and low power circuit design primarily targeting sensing for IoT applications.
Key research accomplishments
1. Power dense MEMS and Piezoelectric harvesters: Demonstrated record power density MEMS EM harvester for near 50-Hz vibration that has the current record in power density (10x state-of-art). Demonstrated a full vibration energy harvesting and storage system using co-optimized piezoelectric harvester and Bias-Flip based interface power electronics. The system currently has the highest power-bandwidth performance.
2. General purpose IC for energy harvester interfacing: Built an IC in TSMC 180nm platform that has record low-voltage AC cold-startup, accomplishes AC-DC conversion, maximum power tracking and frequency tuning: A first of its kind demonstration for full-functionality IC for such harvesting applications.
3. Industry standard compact modeling: Developed a physics-based GaN HEMT Verilog-A model which is now adopted as industry standard. It will be used by industry members for RF- and HV- system design using GaN-HEMTs and will be incorporated in all commericial simulators. Press release here
4. Novel RF-MMIC and device design for vehicular communication: Collaborated in the design of novel RF-circuits such as PAs, LNAs, oscillators and RF-converters using GaN-foundry. The modules target next-generation IEEE802.11P communication and have state-of-art performance metrics such as form-factor, IMD and Psat performance, NF for this application. It also involved in using novel techniques such as gm-compensation at the device-level itself to achieve record-linearity boost in GaN-HEMT devices.
5. Compact modeling and device-design for beyond CMOS devices: Developed physics-based models for steep sub-threshold devices such as TFETs and NCFETs as well as 2D-devices such as MoS2-FETs. Detailed studies and modeling of physical effects enabled demonstrations (with collaborators) of record performance NCFETs, high frequency 2D-rectennas, variability aware 2D-circuits and systems. Recent work on MoS2-rectennas is covered by MIT News, and Press release.