Journal publications

Conference proceedings


  • Threshold voltage-engineered Nitride-based high performance transistors for high frequency and/or high power electronics - S. Joglekar, U. Radhakrishna, T. Palacios, U. S. application No: 62/436,511, Date:  5/1/2017.

Book Chapter

  • 'III-V Nitride Electronic Devices' to be published in the Semiconductor and Semimaterials Book Series by Elsevier. Editors: Dr. Rongming Chu (HRL Laboratories, LLC) and Dr. Keisuke Shinohara (Teledyne Scientific, LLC). Invitation to contribute to the chapter on physics-based modeling [in preparation].