Professional Experience

Teaching experience

3.42/6.720: Integrated microelectronic devices- Fall 2016

Course instructor: Prof. Dimitri Antoniadis and Prof. Jesus Del Alamo

Guest lectures in the absence of course instructors.


3.42/6.720: Integrated microelectronic devices- Fall 2015

Course instructor: Prof. Dimitri Antoniadis

Course description: Covers physics of microelectronic semiconductor devices for integrated circuit applications. Topics include semiconductor fundamentals, p-n junction, metal-oxide semiconductor structure, metal-semiconductor junction, MOS field-effect transistor, and bipolar junction transistor. Studies modern nanoscale devices, including electrostatic scaling, materials beyond Si, carrier transport from the diffusive to the ballistic regime. Emphasizes physical understanding of device operation through energy band diagrams and short-channel MOSFET device design. Includes device modeling exercises. Familiarity with MATLAB required.


6.774: Microfabrication: Front end- Fall 2012

Course instructor: Prof. Judy Hoyt

Course description: Advanced physical modeling and simulation and practical aspects of micro- and nanofabrication processes such as oxidation, diffusion, ion implantation, chemical vapor deposition, atomic layer deposition, etching, and epitaxy.  Topics relevant to CMOS, bipolar,  optoelectronic and other novel device fabrication including high k gate dielectrics, gate etching, implant-damage enhanced diffusion, advanced metrology, stress effects on oxidation, SiGe growth and fabrication of process-induced strained Si, III-V channel materials, and non-planar FET fabrication.


EE6341: Compact modeling of devices for IC design- Fall 2011

Course instructor: Prof. Anjan Chakravorty, IIT Madras

Course description: Bipolar transistors, modern bipolar transistors, regional approach, DC characteristics under various injection levels, transit time and capacitance components, high current effects, integral charge control relation (ICCR), generalized ICCR, transient integral charge control (TICC) relation, field based modeling, one dimensional intrinsic bipolar transistor model development, internal base impedance, two/three dimensional effects and complete transistor modeling, temperature and other effects, industry standard models like SGP, VBIC, MEXTRAM and HICUM. Hierarchical modeling strategy, application circuits. MOS Transistors: PaoSah model, charge sheet approximation, surface potential, large signal modeling of MOST: quasi-static and non-quasi-static effects, threshold voltage based models, gummel symmetry and its effects in compact MOS models, charge based EKV model, surface potential based model formulation, LDMOS model development, PSP model features, future MOS model scenario. 


Industry experience

 

Mentors: Dr. Sandeep Bahl, Dr. Vijay Krishnamurthy, Dr. Kuntal Joardar 

  • Development of compact model for HV TI specific devices
  • Device measurement and characterization
  • HV switching board simulation and study for a commercial product design
  • Reliability and slewing measurements

 

Mentors: Dr. James Fiorenza, Dr. Geoffrey Coram

  • Development of compact model for ADI specific devices
  • Device measurement and characterization

Fairchild Semiconductor Inc., Pune India  (Summer 2010) 

Mentor: Dr. Ritu Sodhi

  • Simulation of SOI-LDMOS transistor using TCAD-MEDICI to study impact ionization and self-heating
  • Development of compact model implementable in Verilog-A to include impact ionization
  • Analysis of scalability of model with channel and drift region lengths
  • Impact of self heating on device breakdown voltage and a model for device self heating